First transistors USSR

Used Google translator

     The first serial transistors in the Soviet Union, not including experienced КС1 - КС8 (1953), were point contact p-n-p germanium transistors С1 and С2 (1954 - 1960). Length of the body without pins 12 mm, diameter 6.5 mm. Lead Length 4 mm. Weight 2 grams. Given that the findings are very short, the weight of the transistors is pretty big. In comparison, for example transistors МП40 with long pin weigh only 1.5 grams. Great weight С1 and С2 due to their design features. One transistor С2 I made out to study the structure. After removing the outer body revealed that it is a brass cylinder having a diameter of 6 mm, and inside which is a germanium crystal. In the middle of the cylinder, there are two technological hole diameter of 2.5 mm. The thickness of the cylinder wall in the opening - 0.4 mm. The outer casing is made of an alloy similar to nickel.
     More information about vintage Soviet transistors can be found here.

     Note:
     КС1, КС8 - KS1, KS8
     С1, С2 - S1, S2
     МП40 - MP40

Photos can be enlarged

Through the hole in the brass body is seen germanium crystal with contact wires

The photo shows that the outer casing provides only tightness and strength of the structure creates a second - brass body, inside which is a germanium crystal

Construction transistors C1 and C2

Transistors packed in paper envelopes on 1 piece

American counterpart transistors C1 and C2 is a point contact p-n-p transistor 2N25 of "Western Electric Company Inc.; New York". They began to produce in 1953, a year before the Soviet counterparts. Structurally, they are similar, but 2N25 instead of a metal casing that covers the hole in the hull, used a plastic ring. Case dimensions without pins 12 x 5.5 mm. Weight 1 g. Available I have instances marking the date of manufacture 8-53 and 10-53. Information on many of the old transistors can be found at wylie.org.uk

Should the protective ring can be seen that the filler is probably the entire interior of the housing

П1, П2 (P1, P2) - the first domestic p-n-p germanium junction transistors (1955 - 1960).
Actual dimensions 19 x 9 mm (passport 20 x 10 mm). Lead Length 30 mm. Weight 2.5 g

Transistors packed in paper envelopes on 1 piece

П3 (P3) - the first Soviet germanium planar transistor p-n-p high power (1955 - 1960). Dimensions: 24 x 27 mm. Core diameter 25 mm. Weight 8 grams

П4БЭ (P4BE) - The first Soviet powerful planar germanium transistor p-n-p type. Power of 10 watts. Probably produced since 1957. Dimensions 30 x 9 mm without pins. Weight 14 grams.

 П411A  (P411A) - germanium diffusion microwave transistor p-n-p type (Development, 1959). My attention it has attracted an unusual hull design

П309 (P309) - silicon n-p-n transistors early 60's. Produced until recently, but in other cases. Initially the body has dimensions - height 11 mm - diameter 10mm with a rim diameter of 13 mm. Weight 2 g The photo shows the transistors П309 (P309) , made in 1964 and 1985

П16 (P16) – p-n-p germanium junction transistors. Produced since 1959. One of my existing instances I opened for the study design

Below you can see the construction of some Soviet and foreign transistors.

Soviet germanium p-n-p transistor ГТ310Б (GT310B). Diameter 3 mm.

Soviet germanium p-n-p transistor ГТ402А (GT402A)

The germanium p-n-p transistor 2SB257 (60 years)

The germanium p-n-p transistor OC38 (50 years)

The germanium p-n-p transistor OC71A. Presumably produced since 1954. An interesting design as a glass bulb filled with a protective gel.

In the magazine "Radio & TV News" in January 1959, I found these interesting pictures that explain the device of the first transistors of different types

Areas of the first transistor technology from the magazine "Radio & TV News" for August 1956

Also of interest are the old copper oxide semiconductor diodes
7-1a type produced in the USSR. They were also called copper oxide rectifiers or valves. The diodes in the photo below made in 1961

In the photo below one of the first mass-produced Soviet germanium diodes - point ДГ-Ц7 (DG-C7) and planar ДГ-Ц21, ДГ-Ц24, ДГ-Ц27 (DG-C21, DG-C24, DG-C27). Producing them started in the mid 50s.

Construction diode type ДГ-Ц21 - ДГ-Ц27 (DG-C21 - DG-C27)